simpeg.electromagnetics.static.self_potential.Simulation3DCellCentered#
- class simpeg.electromagnetics.static.self_potential.Simulation3DCellCentered(mesh, survey=None, sigma=None, rho=None, q=None, qMap=None, **kwargs)[source]#
- Bases: - Simulation3DCellCentered- A self potential simulation. - Parameters:
- meshdiscretize.base.BaseMesh
- surveysimpeg.electromagnetics.static.self_potential.Survey
- sigma, rhofloator array_like
- The conductivity/resistivity model of the subsurface. 
- qfloat, array_like,optional
- The charge density accumulation rate model (C/(s m^3)), also physically represents the volumetric current density (A/m^3). 
- qMapsimpeg.maps.IdentityMap,optional
- The mapping used to go from the simulation model to q. Set this to invert for q. 
- **kwargs
- arguments passed on to - resistivity.Simulation3DCellCentered
 
- mesh
 - Attributes - Cell center inner product matrix. - Cell center property inner product matrix. - Cell center property inner product inverse matrix. - Cell center property inner product matrix. - Cell center property inner product inverse matrix. - Edge inner product matrix. - Edge inner product inverse matrix. - Edge property inner product matrix. - Edge property inner product inverse matrix. - Edge property inner product matrix. - Edge property inner product inverse matrix. - Face inner product matrix. - Face inner product inverse matrix. - Face property inner product matrix. - Face property inner product inverse matrix. - Face property inner product matrix. - Face property inner product inverse matrix. - Node inner product matrix. - Node inner product inverse matrix. - Node property inner product matrix. - Node property inner product inverse matrix. - Node property inner product matrix. - Node property inner product inverse matrix. - Type of boundary condition to use for simulation. - A list of solver objects to clean when the model is updated - SimPEG - Counterobject to store iterations and run-times.- HasModel.deleteTheseOnModelUpdate has been deprecated. - Mesh for the simulation. - The inversion model. - True if a model is necessary - Charge density accumulation rate (c/(s m^3)) physical property model. - Derivative of Charge density accumulation rate (C/(s m^3)) wrt the model. - Mapping of the inversion model to Charge density accumulation rate (C/(s m^3)). - Electrical resistivity (ohm m) physical property model. - Derivative of Electrical resistivity (Ohm m) wrt the model. - Mapping of the inversion model to Electrical resistivity (Ohm m). - Path to directory where sensitivity file is stored. - Electrical conductivity (s/m) physical property model. - Derivative of Electrical conductivity (S/m) wrt the model. - Mapping of the inversion model to Electrical conductivity (S/m). - Numerical solver used in the forward simulation. - Solver-specific parameters. - Whether to store the sensitivity matrix - Array defining which boundary faces to interpret as surfaces of Neumann boundary - The DC survey object. - Verbose progress printout. - Ainv - MccI - Vol - Methods - Jtvec(m, v[, f])- Compute adjoint sensitivity matrix (J^T) and vector (v) product. - Jtvec_approx(m, v[, f])- Approximation of the Jacobian transpose times a vector for the model provided. - Jvec(m, v[, f])- Compute sensitivity matrix (J) and vector (v) product. - Jvec_approx(m, v[, f])- Approximation of the Jacobian times a vector for the model provided. - MccRhoDeriv(u[, v, adjoint])- Derivative of MccProperty with respect to the model. - MccRhoIDeriv(u[, v, adjoint])- Derivative of MccPropertyI with respect to the model. - MccSigmaDeriv(u[, v, adjoint])- Derivative of MccProperty with respect to the model. - MccSigmaIDeriv(u[, v, adjoint])- Derivative of MccPropertyI with respect to the model. - MeRhoDeriv(u[, v, adjoint])- Derivative of MeProperty with respect to the model. - MeRhoIDeriv(u[, v, adjoint])- Derivative of MePropertyI with respect to the model. - MeSigmaDeriv(u[, v, adjoint])- Derivative of MeProperty with respect to the model. - MeSigmaIDeriv(u[, v, adjoint])- Derivative of MePropertyI with respect to the model. - MfRhoDeriv(u[, v, adjoint])- Derivative of MfProperty with respect to the model. - MfRhoIDeriv(u[, v, adjoint])- I Derivative of MfPropertyI with respect to the model. - MfSigmaDeriv(u[, v, adjoint])- Derivative of MfProperty with respect to the model. - MfSigmaIDeriv(u[, v, adjoint])- I Derivative of MfPropertyI with respect to the model. - MnRhoDeriv(u[, v, adjoint])- Derivative of MnProperty with respect to the model. - MnRhoIDeriv(u[, v, adjoint])- Derivative of MnPropertyI with respect to the model. - MnSigmaDeriv(u[, v, adjoint])- Derivative of MnProperty with respect to the model. - MnSigmaIDeriv(u[, v, adjoint])- Derivative of MnPropertyI with respect to the model. - dpred([m, f])- Predicted data for the model provided. - fields([m, calcJ])- Return the computed geophysical fields for the model provided. - getA([resistivity])- Make the A matrix for the cell centered DC resistivity problem A = D MfRhoI G - getJtJdiag(m[, W, f])- Return the diagonal of JtJ - getRHS()- RHS for the DC problem q - getRHSDeriv(source, v[, adjoint])- Derivative of the right hand side with respect to the model - Evaluates the sources, and puts them in matrix form :rtype: tuple :return: q (nC or nN, nSrc) - make_synthetic_data(m[, relative_error, ...])- Make synthetic data for the model and Gaussian noise provided. - residual(m, dobs[, f])- The data residual. - fieldsPair - getADeriv - getJ - setBC - Notes - The charge density accumulation rate, \(q\), is related to the self electric potential, \(\phi\), with the same PDE, that relates current sources to potential in the resistivity case. \[- \nabla \cdot \sigma \nabla \phi = q\]- This equation is solve for potential with a finite volume approach, discretized with \(\phi\) and \(q\) on cell centers, electrical conductivity :math`sigma` as a cell property, and therefore current density lives on the faces between cells. - By default the boundary conditions assume a Robin condition on the subsurface boundaries, and a zero Nuemann boundary at the top. For more details on the boundary conditions, check out the resistivity simulations. 
