simpeg.electromagnetics.static.spontaneous_potential.Simulation3DCellCentered#
- class simpeg.electromagnetics.static.spontaneous_potential.Simulation3DCellCentered(mesh, survey=None, sigma=None, rho=None, q=None, qMap=None, **kwargs)[source]#
Bases:
Simulation3DCellCentered
A self potential simulation.
- Parameters:
- mesh
discretize.base.BaseMesh
- survey
simpeg.electromagnetics.static.self_potential.Survey
- sigma, rho
float
or array_like The conductivity/resistivity model of the subsurface.
- q
float
, array_like,optional
The charge density accumulation rate model (C/(s m^3)), also physically represents the volumetric current density (A/m^3).
- qMap
simpeg.maps.IdentityMap
,optional
The mapping used to go from the simulation model to q. Set this to invert for q.
- **kwargs
arguments passed on to
resistivity.Simulation3DCellCentered
- mesh
Attributes
Cell center inner product matrix.
Cell center property inner product matrix.
Cell center property inner product inverse matrix.
Cell center property inner product matrix.
Cell center property inner product inverse matrix.
Edge inner product matrix.
Edge inner product inverse matrix.
Edge property inner product matrix.
Edge property inner product inverse matrix.
Edge property inner product matrix.
Edge property inner product inverse matrix.
Face inner product matrix.
Face inner product inverse matrix.
Face property inner product matrix.
Face property inner product inverse matrix.
Face property inner product matrix.
Face property inner product inverse matrix.
Node inner product matrix.
Node inner product inverse matrix.
Node property inner product matrix.
Node property inner product inverse matrix.
Node property inner product matrix.
Node property inner product inverse matrix.
Type of boundary condition to use for simulation.
A list of solver objects to clean when the model is updated
SimPEG
Counter
object to store iterations and run-times.matrices to be deleted if the model for conductivity/resistivity is updated
Mesh for the simulation.
The inversion model.
True if a model is necessary
Charge density accumulation rate (c/(s m^3)) physical property model.
Derivative of Charge density accumulation rate (C/(s m^3)) wrt the model.
Mapping of the inversion model to Charge density accumulation rate (C/(s m^3)).
Electrical resistivity (ohm m) physical property model.
Derivative of Electrical resistivity (Ohm m) wrt the model.
Mapping of the inversion model to Electrical resistivity (Ohm m).
Path to directory where sensitivity file is stored.
Electrical conductivity (s/m) physical property model.
Derivative of Electrical conductivity (S/m) wrt the model.
Mapping of the inversion model to Electrical conductivity (S/m).
Numerical solver used in the forward simulation.
Solver-specific parameters.
Whether to store the sensitivity matrix
Array defining which boundary faces to interpret as surfaces of Neumann boundary
The DC survey object.
Verbose progress printout.
Ainv
MccI
Vol
Methods
Jtvec
(m, v[, f])Compute adjoint sensitivity matrix (J^T) and vector (v) product.
Jtvec_approx
(m, v[, f])Approximation of the Jacobian transpose times a vector for the model provided.
Jvec
(m, v[, f])Compute sensitivity matrix (J) and vector (v) product.
Jvec_approx
(m, v[, f])Approximation of the Jacobian times a vector for the model provided.
MccRhoDeriv
(u[, v, adjoint])Derivative of MccProperty with respect to the model.
MccRhoIDeriv
(u[, v, adjoint])Derivative of MccPropertyI with respect to the model.
MccSigmaDeriv
(u[, v, adjoint])Derivative of MccProperty with respect to the model.
MccSigmaIDeriv
(u[, v, adjoint])Derivative of MccPropertyI with respect to the model.
MeRhoDeriv
(u[, v, adjoint])Derivative of MeProperty with respect to the model.
MeRhoIDeriv
(u[, v, adjoint])Derivative of MePropertyI with respect to the model.
MeSigmaDeriv
(u[, v, adjoint])Derivative of MeProperty with respect to the model.
MeSigmaIDeriv
(u[, v, adjoint])Derivative of MePropertyI with respect to the model.
MfRhoDeriv
(u[, v, adjoint])Derivative of MfProperty with respect to the model.
MfRhoIDeriv
(u[, v, adjoint])I Derivative of MfPropertyI with respect to the model.
MfSigmaDeriv
(u[, v, adjoint])Derivative of MfProperty with respect to the model.
MfSigmaIDeriv
(u[, v, adjoint])I Derivative of MfPropertyI with respect to the model.
MnRhoDeriv
(u[, v, adjoint])Derivative of MnProperty with respect to the model.
MnRhoIDeriv
(u[, v, adjoint])Derivative of MnPropertyI with respect to the model.
MnSigmaDeriv
(u[, v, adjoint])Derivative of MnProperty with respect to the model.
MnSigmaIDeriv
(u[, v, adjoint])Derivative of MnPropertyI with respect to the model.
dpred
([m, f])Predicted data for the model provided.
fields
([m, calcJ])Return the computed geophysical fields for the model provided.
getA
([resistivity])Make the A matrix for the cell centered DC resistivity problem A = D MfRhoI G
getJtJdiag
(m[, W, f])Return the diagonal of JtJ
getRHS
()RHS for the DC problem q
getRHSDeriv
(source, v[, adjoint])Derivative of the right hand side with respect to the model
Evaluates the sources, and puts them in matrix form :rtype: tuple :return: q (nC or nN, nSrc)
make_synthetic_data
(m[, relative_error, ...])Make synthetic data for the model and Gaussian noise provided.
residual
(m, dobs[, f])The data residual.
fieldsPair
getADeriv
getJ
setBC
Notes
The charge density accumulation rate, \(q\), is related to the self electric potential, \(\phi\), with the same PDE, that relates current sources to potential in the resistivity case.
\[- \nabla \cdot \sigma \nabla \phi = q\]This equation is solve for potential with a finite volume approach, discretized with \(\phi\) and \(q\) on cell centers, electrical conductivity :math`sigma` as a cell property, and therefore current density lives on the faces between cells.
By default the boundary conditions assume a Robin condition on the subsurface boundaries, and a zero Nuemann boundary at the top. For more details on the boundary conditions, check out the resistivity simulations.