SimPEG.electromagnetics.static.spontaneous_potential.Simulation3DCellCentered#
- class SimPEG.electromagnetics.static.spontaneous_potential.Simulation3DCellCentered(mesh, survey=None, sigma=None, rho=None, q=None, qMap=None, **kwargs)[source]#
Bases:
Simulation3DCellCentered
A Spontaneous potential simulation.
- Parameters:
- mesh
discretize.base.BaseMesh
- survey
spontaneous_potential.Survey
- sigma, rho
float
or array_like The conductivity/resistivity model of the subsurface.
- q
float
, array_like,optional
The charge density accumulation rate model (C/(s m^3)), also physically represents the volumetric current density (A/m^3).
- qMap
SimPEG.maps.IdentityMap
,optional
The mapping used to go from the simulation model to q. Set this to invert for q.
- **kwargs
arguments passed on to
resistivity.Simulation3DCellCentered
- mesh
Notes
The charge density accumulation rate, \(q\), is related to the spontaneous electric potential, \(\phi\), with the same PDE, that relates current sources to potential in the resistivity case.
\[- \nabla \cdot \sigma \nabla \phi = q\]This equation is solve for potential with a finite volume approach, discretized with \(\phi\) and \(q\) on cell centers, electrical conductivity :math`sigma` as a cell property, and therefore current density lives on the faces between cells.
By default the boundary conditions assume a Robin condition on the subsurface boundaries, and a zero Nuemann boundary at the top. For more details on the boundary conditions, check out the resistivity simulations.
Attributes
matrices to be deleted if the model for conductivity/resistivity is updated
Charge density accumulation rate (c/(s m^3)) physical property model.
Derivative of Charge density accumulation rate (C/(s m^3)) wrt the model.
Mapping of the inversion model to Charge density accumulation rate (C/(s m^3)).
Methods
getRHS
()RHS for the DC problem q
getRHSDeriv
(source, v[, adjoint])Derivative of the right hand side with respect to the model